Electrical Behavior of Vertical Pt/Au Schottky Diodes on GaN Homoepitaxy
Résumé
Schottky barrier diodes on GaN on GaN substrates are fabricated for the purpose
of material and technology characterization. The epitaxial layers are grown by
MOCVD. I–V measurements as a function of the temperature in the range
80–480 K show ideality factor (n) and barrier height (ϕB) variations not following a
thermionic (TE) model. Consequently, barrier height fluctuations are considered.
In the temperature range 280–480 K, an average barrier height of 1.31 eV with a
relatively large standard deviation (σ) of 0.15 eV is extracted using this model. The
n(T ) variation is also analyzed in order to extract the field sensibility of 1) the
mean barrier height variation (ρ2 = -0.1) and 2) the barrier height standard
deviation (ρ3 = -15mV). The corrected Richardson plot usingϕB and σ values is
linear and gives a Richardson constant of 31.5 A cm² K² close to the theoretical
value of 26.4 A cm² K². For a deeper understanding of ϕB fluctuation origins,
micro-Raman mapping of the epitaxial layers and deep-level transient spectroscopy
(DLTS) are used. μ-RS mappings show compressive strain for diodes
having suffered electrical breakdown. DLTS analysis shows the presence of nine
levels whose signatures are extracted and nature discussed.
Domaines
Physique [physics]
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Physica Status Solidi a - 2023 - Dagher - Electrical Behavior of Vertical Pt Au Schottky Diodes on GaN Homoepitaxy.pdf (3.32 Mo)
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