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Article Dans Une Revue Applied Surface Science Année : 2020

Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study

Résumé

An alternative route for the development of diamond-based technologies is the Smart-Cut process. Such a process could make possible the combination of diamond and silicon technologies, as well as building alternative structures or manufacturing large diamond wafers. However, crystalline quality and implantation-related damages may alter the electronic properties of the diamond wafer. In fact, this is a critical bottleneck that needs to be analysed in order to develop a reliable diamond/Smart-Cut based technology. In this contribution, we present STEM-based experiments used to evaluate various key parameters such as the sharpness of the transition regions, the behaviour of the implanted region and diamond lattice performance in Smart-Cut processes. Indeed, an outstanding sp2/sp3 relation close to ideality (it is, that of undamaged diamond) is evidenced in the diamond-transfer region.
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Dates et versions

hal-04094901 , version 1 (06-02-2024)

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J.C. Piñero, J. de Vecchy, D. Fernández, G. Alba, J. Widiez, et al.. Lattice performance during initial steps of the Smart-Cut™ process in semiconducting diamond: A STEM study. Applied Surface Science, 2020, 528, pp.146998. ⟨10.1016/j.apsusc.2020.146998⟩. ⟨hal-04094901⟩
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