Fabrication of HfZrO2 ferroelectric capacitors and study of wake-up & imprint dynamics - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2023

Fabrication of HfZrO2 ferroelectric capacitors and study of wake-up & imprint dynamics

Résumé

The discovery of the ferroelectric orthorhombic phase in doped HfO2 gave a major boost to the interest for integrated ferroelectric oxides in the CMOS industry. Given its low crystallization temperature, HfZrO2 (HZO) is an excellent candidate for both front and back-end of line integration of ferroelectric Non-Volatile Memories or artificial synapses. Although promising demonstrations of have been disclosed, achieving minimum wake-up and imprint behavior remains a significant challenge. In this work, elaboration by sputtering of HZO films and wake-up & imprint dynamics are studied.
Fichier non déposé

Dates et versions

hal-04083650 , version 1 (27-04-2023)

Identifiants

  • HAL Id : hal-04083650 , version 1

Citer

Bertrand Vilquin. Fabrication of HfZrO2 ferroelectric capacitors and study of wake-up & imprint dynamics. Ferroelectrics Workshop 2023 - Domains and Domain Walls, NTNU Nano, Apr 2023, Tronso-Trondheim, Norway. ⟨hal-04083650⟩
67 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More