Fabrication of HfZrO2 ferroelectric capacitors and study of wake-up & imprint dynamics
Résumé
The discovery of the ferroelectric orthorhombic phase in doped HfO2 gave a major boost to the interest for integrated ferroelectric oxides in the CMOS industry. Given its low crystallization temperature, HfZrO2 (HZO) is an excellent candidate for both front and back-end of line integration of ferroelectric Non-Volatile Memories or artificial synapses. Although promising demonstrations of have been disclosed, achieving minimum wake-up and imprint behavior remains a significant challenge. In this work, elaboration by sputtering of HZO films and wake-up & imprint dynamics are studied.