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Article Dans Une Revue Materials Science Forum Année : 2012

Investigations on Ni-Ti-Al Ohmic Contacts Obtained on P-Type 4H-SiC

Résumé

Transfer Length Method (TLM) based-structures were fabricated on 0.8 µm-thick epitaxial p-type Silicon Carbide (4H-SiC) layers. TLM mesas were defined by a 2 µm height using an SF 6 /O 2 reactive ion etching. TLM metal patterns were obtained by a lift-off procedure and electron beam deposition of Ni, Ti, Al and Pt. The patterned samples were annealed in Argon ambient at temperature ranging from 700°C up to 1000°C in a RTA furnace with a rapid heating ramp (up to 50°C/s) to complete the ohmic contact with the p-type SiC layer. Specific contact resistances were extracted from current/voltage measurements. To identify and follow the profile evolution of constituting element in the contacts and at the SiC/contact interface, the ohmic contacts were characterized using Secondary Ion Mass Spectrometry and Energy-Dispersive X-Ray spectroscopy before and after annealing. Ohmic contacts are obtained only for the Ni/Ti/Al and Ni/Ti/Al/Ni stacking layers and not for the Ti/Al/Ti/Ni and Ti/Al/Ti/Pt/Ni compositions. The specific contact resistance of Ni/Ti/Al/Ni stacking layers was observed to decrease from 2.7×10 -4  Ω.cm 2 at 700°C and 6.3×10 -5 Ω.cm 2 at 750°C to a minimal value of 1.5×10 -5  Ω.cm 2 at 800°C. Ohmic contacts are obtained with a reproducibility of 80 %.

Dates et versions

hal-04050541 , version 1 (29-03-2023)

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Farah Laariedh, Mihai Lazar, Pierre Cremillieu, Jean -Louis Leclercq, Dominique Planson. Investigations on Ni-Ti-Al Ohmic Contacts Obtained on P-Type 4H-SiC. Materials Science Forum, 2012, 711, pp.169-173. ⟨10.4028/www.scientific.net/MSF.711.169⟩. ⟨hal-04050541⟩
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