Investigation of doping in III-nitrides by combining atom probe tomography and EDX spectroscopy
Résumé
Atom Probe Tomography (APT) has emerged as a reliable chemical analysis technique as it provides access to the chemical composition of the analyzed material together with the 3D distribution of the atoms in a tip-shaped specimen with hundred-nanometer diameter. Moreover, combining APT with EDX enables first to overcome some artefacts inherent to APT to get quantitative data but also permits to investigate nanostructures from nano-to micro-scale. We have successfully applied these techniques for studying both n-type (Ge) and p-type (Mg) doping of AlGaN layers.
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