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Article Dans Une Revue Journal of Applied Physics Année : 2022

Effect of energy deposition on the disordering kinetics in dual-ion beam irradiated single-crystalline GaAs

Résumé

The damage induced in GaAs crystals irradiated with dual-ion beam (low-energy I 2+ and highenergy Fe 9+), producing simultaneous nuclear (S n) and electronic (S e) energy depositions, was investigated using several characterization techniques. Analysis of the damage buildup shows that S n alone (single 900 keV ion beam) leads, in a two-step process, to full amorphization of the irradiated layer (at a fluence of 1.5 nm-2) and to the development of a high (2.2 %) elastic strain. Conversely, only one step in the disordering process is observed upon dual-ion beam irradiation (i.e. 900 keV I 2+ and 27 MeV Fe 9+ , S n &S e); hence, amorphization is prevented and the elastic strain remains very weak (below 0.2 %). These results provide a strong evidence that, in GaAs, the electronic energy deposition can induce an efficient dynamic annealing of the damage created in collision cascades formed during nuclear energy deposition.

Domaines

Matériaux
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Dates et versions

hal-03861328 , version 1 (19-11-2022)

Identifiants

Citer

A. Debelle, G. Gutierrez, Alexandre Boulle, I. Monnet, L. Thomé. Effect of energy deposition on the disordering kinetics in dual-ion beam irradiated single-crystalline GaAs. Journal of Applied Physics, 2022, 132 (8), pp.085905. ⟨10.1063/5.0096764⟩. ⟨hal-03861328⟩
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