Effect of energy deposition on the disordering kinetics in dual-ion beam irradiated single-crystalline GaAs
Résumé
The damage induced in GaAs crystals irradiated with dual-ion beam (low-energy I 2+ and highenergy Fe 9+), producing simultaneous nuclear (S n) and electronic (S e) energy depositions, was investigated using several characterization techniques. Analysis of the damage buildup shows that S n alone (single 900 keV ion beam) leads, in a two-step process, to full amorphization of the irradiated layer (at a fluence of 1.5 nm-2) and to the development of a high (2.2 %) elastic strain. Conversely, only one step in the disordering process is observed upon dual-ion beam irradiation (i.e. 900 keV I 2+ and 27 MeV Fe 9+ , S n &S e); hence, amorphization is prevented and the elastic strain remains very weak (below 0.2 %). These results provide a strong evidence that, in GaAs, the electronic energy deposition can induce an efficient dynamic annealing of the damage created in collision cascades formed during nuclear energy deposition.
Domaines
Matériaux| Origine | Fichiers produits par l'(les) auteur(s) |
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