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Communication Dans Un Congrès Année : 2022

Interpretation of 28 nm FD-SOI quantum dot transport data taken at 1.4 K using 3D Quantum TCAD simulations

Résumé

Reliable operation of nanoscale CMOS quantum dot devices at cryogenic temperatures fabricated with standard manufacturing techniques is of great importance for quantum computing applications. We investigated the behavior of an Ultra Thin Body and Buried oxide (UTBB) Fully Depleted Silicon-On-Insulator (FD-SOI) quantum dot device fabricated using the standard fabrication process of STMicroelectronics at  very low temperatures. The performance of the quantum dot device is simulated and analyzed using the 3D Quantum Technology Computer Aided Design (QTCAD) software recently developed by Nanoacademic Technologies, achieving convergence down to 1.4 K. In this paper we present preliminary simulation results of this work and compare them with actual experimental data collected from measurements of the same  device.

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hal-03765899 , version 1 (31-08-2022)

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Ioanna Kriekouki, Félix Beaudoin, Pericles Philippopoulos, Chenyi Zhou, Julien Camirand-Lemyre, et al.. Interpretation of 28 nm FD-SOI quantum dot transport data taken at 1.4 K using 3D Quantum TCAD simulations. 8th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS 2022), May 2022, Udine, Italy. ⟨10.1016/j.sse.2022.108355⟩. ⟨hal-03765899⟩

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