Interpretation of 28 nm FD-SOI quantum dot transport data taken at 1.4 K using 3D quantum TCAD simulations - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Solid-State Electronics Année : 2022

Interpretation of 28 nm FD-SOI quantum dot transport data taken at 1.4 K using 3D quantum TCAD simulations

Résumé

Reliable operation of nanoscale CMOS quantum dot devices at cryogenic temperatures fabricated with standard manufacturing techniques is of great importance for quantum computing applications. We investigated the very low temperature behavior of an Ultra Thin Body and Buried oxide (UTBB) Fully Depleted Silicon-On-Insulator (FD-SOI) quantum dot device fabricated using the standard fabrication process of STMicroelectronics. The performance of the quantum dot device is simulated and analyzed using the 3D Quantum Technology Computer Aided Design (QTCAD) software recently developed by Nanoacademic Technologies, achieving convergence down to 1.4 K. In this paper we present preliminary simulation results and compare them with experimental data collected from the measurements on a device with the same geometry.

Fichier principal
Vignette du fichier
SSE-22_preprint.pdf (1.38 Mo) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-03719983 , version 1 (11-07-2022)

Licence

Identifiants

  • HAL Id : hal-03719983 , version 1

Citer

I. Kriekouki, Félix Beaudoin, Pericles Philippopoulos, Chenyi Zhou, Julien Camirand-Lemyre, et al.. Interpretation of 28 nm FD-SOI quantum dot transport data taken at 1.4 K using 3D quantum TCAD simulations. Solid-State Electronics, 2022. ⟨hal-03719983⟩

Collections

UGA CNRS TIMA
56 Consultations
156 Téléchargements

Partager

Gmail Mastodon Facebook X LinkedIn More