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Article Dans Une Revue Materials Science Forum Année : 2022

Investigation of SiC thyristors with varying amplifying gate design

Résumé

This paper presents experimental 1.2 kV, 10 A SiC thyristors with different amplifying gate design. In contrast to comparative devices (with simple gate) the amplifying gate thyristors show a characteristic snap-back and a higher gate current to trigger. Their gate-anode I-V characteristics comply with the underlying design constraint, regarding the resistances of pilot and main thyristor: (R P > R M ). Moreover, the turn-on waveforms of well-designed amplifying gate thyristors reveal peak-shaped inversions in the gate current and voltage transients, providing clear evidence of the successive triggering of pilot and main thyristor.
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Dates et versions

hal-03702384 , version 1 (23-06-2022)

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Sigo Scharnholz, Ralf Hassdorf, Dirk Bauersfeld, Bertrand Vergne, Luong Viêt Phung, et al.. Investigation of SiC thyristors with varying amplifying gate design. Materials Science Forum, 2022, 1062, pp.493-497. ⟨10.4028/p-ztr5d7⟩. ⟨hal-03702384⟩
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