Investigation of SiC thyristors with varying amplifying gate design
Résumé
This paper presents experimental 1.2 kV, 10 A SiC thyristors with different amplifying gate design. In contrast to comparative devices (with simple gate) the amplifying gate thyristors show a characteristic snap-back and a higher gate current to trigger. Their gate-anode I-V characteristics comply with the underlying design constraint, regarding the resistances of pilot and main thyristor: (R P > R M ). Moreover, the turn-on waveforms of well-designed amplifying gate thyristors reveal peak-shaped inversions in the gate current and voltage transients, providing clear evidence of the successive triggering of pilot and main thyristor.
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