Insertion of an Ultra‐thin Interfacial Aluminium Layer for the Realisation of a Hf0.5Zr0.5O2 Ferroelectric Tunnel Junction.
Résumé
Herein, the effect of a 2 nm thin aluminum layer inserted between the ferroelectric layer and the top electrode in a TiN/Hf0.5Zr0.5O2/TiN stack deposited by reactive magnetron sputtering is investigated. The oxidation of the interfacial layer during annealing due to scavenging of the Hf0.5Zr0.5O2 impacts both the ferroelectric properties and the electrical conductivity of the junction. It is shown that the overall conductivity of the junction is boosted 20 folds while the resistance ratio between the positive and negative polarization states is increased from 1.3 up to 3.7. Through a systematic analysis of programming conditions, pulse duration, and height, we show that both the remanent polarization and On/Off current ratio can be enhanced at the expanse of the endurance leading to a trade-off.
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