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Article Dans Une Revue IEEE Electron Device Letters Année : 2014

Spin orbit torque non-volatile flip-flop for high speed and low energy applications

Résumé

A novel nonvolatile flip-flop based on spin-orbit torque magnetic tunnel junctions (SOT-MTJs) is proposed for fast and ultralow energy applications. A case study of this nonvolatile flip-flop is considered. In addition to the independence between writing and reading paths, which offers a high reliability, the low resistive writing path performs high-speed, and energy-efficient WRITE operation. We compare the SOT-MTJ performances metrics with the spin transfer torque (STT)-MTJ. Based on accurate compact models, simulation results show an improvement, which attains 20× in terms of WRITE energy per bit cell. At the same writing current and supply voltage, the SOT-MTJ achieves a writing frequency 4× higher than the STT-MTJ.
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Dates et versions

hal-03506992 , version 1 (12-01-2022)

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Kotb Jabeur, Gregory Di Pendina, Fabrice Bernard-Granger, Guillaume Prenat. Spin orbit torque non-volatile flip-flop for high speed and low energy applications. IEEE Electron Device Letters, 2014, 35 (3), pp.408 - 410. ⟨10.1109/led.2013.2297397⟩. ⟨hal-03506992⟩
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