High NV density in a pink CVD diamond grown with N2O addition
Résumé
Growing high-purity diamond containing dense negatively charged nitrogen-vacancy (NV À) centre ensembles is desirable for the development of sensitive quantum sensors that explore the coherent manipulation of the spin states of this atomic-scale defect. By using N 2 O as a dopant, we demonstrate that millimetre-thick single crystals can be grown by Chemical Vapour Deposition (CVD) with substitutional nitrogen concentrations as high as 26 ppm. With a high-energy electron irradiation treatment and in-situ annealing, up to 20% of this nitrogen can be successfully converted into NV À centres leading to densities of almost 5 ppm and to a crystal displaying pink colouration and appealing optical properties. The longitudinal relaxation T 1 time in such a highly doped diamond is measured to be around 3.5 ms at 300 K while inhomogeneous dephasing time T 2 * is estimated to 600 ns. Despite the high NV density, Electron Spin Resonance lines are resolved with clear hyperfine splitting induced by the nuclear spin of nitrogen. The dependence of T 1 on the orientation of the magnetic field suggests that relaxation is dominated by NV-NV dipole interactions when no magnetic field is applied. Such engineered crystals constitute a promising platform for developing future quantum sensing applications.
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