III-V MULTIJUNCTION SOLAR CELLS ON ULTRATHIN GE|SI VIRTUAL SUBSTRATES GROWN AT LOW TEMPERATURE BY RF-PECVD - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2021

III-V MULTIJUNCTION SOLAR CELLS ON ULTRATHIN GE|SI VIRTUAL SUBSTRATES GROWN AT LOW TEMPERATURE BY RF-PECVD

Résumé

The application of Ge|Si virtual substrates with an ultrathin Ge layer to the development of high efficiency III-V solar cells is analyzed. The potential to achieve high efficiencies in GaInP/GaInAs/Si triple-junction cells, which is affected by the optical absorption in the Ge layer, is theoretically demonstrated under realistic scenarios of Ge|Si substrate characteristics and III-V cell configurations. The first dual-junction GaInAs/Ge|Si III-V cells fabricated on these substrates demonstrate the concept with functional devices and show the route to high efficiency implementations by using appropriate Si substrates and optimized Ge deposition.

Domaines

Autre
Fichier principal
Vignette du fichier
EUPVSEC2021_Proceedings_paper_Ivan_Garcia.pdf (685.75 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-03447349 , version 1 (24-11-2021)

Identifiants

  • HAL Id : hal-03447349 , version 1

Citer

Iván García, Monalisa Ghosh, Víctor Orejuela, Pere Roca I Cabarrocas, Ignacio Rey-Stolle. III-V MULTIJUNCTION SOLAR CELLS ON ULTRATHIN GE|SI VIRTUAL SUBSTRATES GROWN AT LOW TEMPERATURE BY RF-PECVD. 38th edition of the European Photovoltaic Solar Energy Conference and Exhibition (EU PVSEC), 2021, Online, France. ⟨hal-03447349⟩
54 Consultations
56 Téléchargements

Partager

Gmail Facebook X LinkedIn More