III-V MULTIJUNCTION SOLAR CELLS ON ULTRATHIN GE|SI VIRTUAL SUBSTRATES GROWN AT LOW TEMPERATURE BY RF-PECVD
Résumé
The application of Ge|Si virtual substrates with an ultrathin Ge layer to the development of high efficiency III-V solar cells is analyzed. The potential to achieve high efficiencies in GaInP/GaInAs/Si triple-junction cells, which is affected by the optical absorption in the Ge layer, is theoretically demonstrated under realistic scenarios of Ge|Si substrate characteristics and III-V cell configurations. The first dual-junction GaInAs/Ge|Si III-V cells fabricated on these substrates demonstrate the concept with functional devices and show the route to high efficiency implementations by using appropriate Si substrates and optimized Ge deposition.
Domaines
Autre
Origine : Fichiers produits par l'(les) auteur(s)