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Journal Articles Electronics Year : 2021

Active Gate Driver and Management of the Switching Speed of GaN Transistors during Turn-On and Turn-Off

Abstract

The paper investigates the management of drain voltage and current slew rates (i.e., dv/dt and di/dt) of high-speed GaN-based power switches during the transitions. An active gate voltage control (AGVC) is considered for improving the safe operation of a switching cell. In an application of open-loop AGVC, the switching speeds vary significantly with the operating point of the GaN HEMT on either or both current and temperature. A closed-loop AGVC is proposed to operate the switches at a constant speed over different operating points. In order to evaluate the reduction in the electromagnetic disturbances, the common mode currents in the system were compared using the active and a standard gate voltage control (SGVC). The closed-loop analysis carried out in this paper has shown that discrete component-based design can introduce limitations to fully resolve the problem of high switching speeds. To ensure effective control of the switching operations, a response time fewer than 10 ns is required for this uncomplex closed-loop technique despite an increase in switching losses.
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Dates and versions

hal-03341258 , version 1 (10-09-2021)

Identifiers

Cite

Mamadou Lamine Beye, Thilini Wickramasinghe, Jean François Mogniotte, Luong Viêt Phung, Nadir Idir, et al.. Active Gate Driver and Management of the Switching Speed of GaN Transistors during Turn-On and Turn-Off. Electronics, 2021, 10 (2), pp.106. ⟨10.3390/electronics10020106⟩. ⟨hal-03341258⟩
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