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Article Dans Une Revue IEEE Transactions on Electron Devices Année : 2021

1-D Drift-Diffusion Simulation of Two-Valley Semiconductors and Devices

Markus Muller
  • Fonction : Auteur
Michael Schroter
  • Fonction : Auteur

Résumé

A two-valley formulation of 1D drift-diffusion transport is presented that takes the coupling between the valleys into account via a new approximation for the non-local electric field. The proposed formulation is suitable for the simulation of III-V heterojunction bipolar transistors as opposed to formulations that employ the single electron gas approximation with a modified velocity-field model, which also causes convergence problems. Based on Boltzmann transport equation simulations, model parameters of the proposed two-valley formulation are given for GaAs, InP, InAs and GaSb at room temperature. Applications of the new formulation are also demonstrated.
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Dates et versions

hal-03332527 , version 1 (02-09-2021)

Identifiants

Citer

Markus Muller, Philippe Dollfus, Michael Schroter. 1-D Drift-Diffusion Simulation of Two-Valley Semiconductors and Devices. IEEE Transactions on Electron Devices, 2021, 68 (3), pp.1221-1227. ⟨10.1109/TED.2021.3051552⟩. ⟨hal-03332527⟩
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