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Communication Dans Un Congrès Année : 2013

Experimental Investigation of Electro-thermal Stress Impact on SiC-BJTs Electrical Characteristics

Résumé

The aim of this study consists in investigating the effects of electrical and thermal stresses on SoC n-p-n bipolar junction transistors (BJTs). The stability of the electrical characteristics of BJTs is inspected under switching operation, DC operation, temperature cycling and continuous thermal stress up to 225°C. While switching operation and temperature cycling for several hours lead to significant changes at 25°C, the electrical characteristics were little degraded at thigh temperature. Besides, DC operation and continuous thermal stress did not result in significant degradation at all, both at room temperature and at high temperature.
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Dates et versions

hal-03326669 , version 1 (26-08-2021)

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  • HAL Id : hal-03326669 , version 1

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Thibault Chailloux, Cyril Calvez, Pascal Bevilacqua, Dominique Planson, Dominique Tournier. Experimental Investigation of Electro-thermal Stress Impact on SiC-BJTs Electrical Characteristics. HiTEN'13, Jul 2013, Oxford, United Kingdom. ⟨hal-03326669⟩
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