Key features for high efficiency and highly robust mmW GaN HEMTs - Archive ouverte HAL
Communication Dans Un Congrès Année : 2017

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hal-03298880 , version 1 (24-07-2021)

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  • HAL Id : hal-03298880 , version 1

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Romain Pécheux, Riad Kabouche, Tommy Defais, Ezgi Dogmus, Malek Zegaoui, et al.. Key features for high efficiency and highly robust mmW GaN HEMTs. XIX International Workshop on the Physics of Semiconductor Devices, IWPSD 2017, Dec 2017, Delhi, India. ⟨hal-03298880⟩
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