A Method for Series-Resistance-Immune Extraction of Low-Frequency Noise Parameters in Nanoscale MOSFETs - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Transactions on Electron Devices Année : 2020

A Method for Series-Resistance-Immune Extraction of Low-Frequency Noise Parameters in Nanoscale MOSFETs

Résumé

This article presents a new methodology for the extraction of low-frequency noise (LFN) or random telegraph noise (RTN) parameters, such as the gate oxide interface trap density, N t , and the mobility fluctuations factor, Ω, without the influence of the source/drain series resistance, R sd . The method utilizes the Y-function - which is immune to any first-order degradation, including the series resistance-as well as the intrinsic mobility degradation factors θ 1,0 and θ 2 . The proposed extraction technique is first demonstrated through numerical calculations and then applied on experimental results of n-channel short length FinFETs. It is shown that if the R sd impact is not accounted for, the extracted LFN parameters through the classic carrier number fluctuations (CNF) with correlated mobility fluctuations (CMF) model can lead to significant extraction errors. This mainly concerns the correlated mobility factor Ω, which may be strongly underestimated, but also the extraction of the trap density N t .
Fichier principal
Vignette du fichier
Tataridou_TED_2020.pdf (1.16 Mo) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)

Dates et versions

hal-03260917 , version 1 (25-11-2021)

Identifiants

Citer

Angeliki Tataridou, Gerard Ghibaudo, Christoforos Theodorou. A Method for Series-Resistance-Immune Extraction of Low-Frequency Noise Parameters in Nanoscale MOSFETs. IEEE Transactions on Electron Devices, 2020, 67 (11), pp.4568-4572. ⟨10.1109/TED.2020.3026612⟩. ⟨hal-03260917⟩
30 Consultations
79 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More