SEU mechanisms in spintronic devices: Critical parameters and basic effects - Archive ouverte HAL Access content directly
Journal Articles IEEE Transactions on Nuclear Science Year : 2021

SEU mechanisms in spintronic devices: Critical parameters and basic effects

Abstract

The paper investigates radiation-induced switching mechanisms, temperature effects, breakdown voltage, sensitive volume and critical charge definitions for Spin-Transfer Torque Magnetic Tunnel Junction. Thermal spike model is adopted to estimate the temperature reached during heavy ion irradiation and temperature effects are suggested to be responsible for the magnetic properties degradation and for upset processes.
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Dates and versions

hal-03252884 , version 1 (08-06-2021)

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Odilia Coi, Nomena Adrianjohany, Gregory Di Pendina, David Dangla, Robert Ecoffet, et al.. SEU mechanisms in spintronic devices: Critical parameters and basic effects. IEEE Transactions on Nuclear Science, 2021, 68 (8), pp.1533-1541. ⟨10.1109/TNS.2021.3080080⟩. ⟨hal-03252884⟩
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