Conference Papers Year : 2020

Electrical property variability of GaN transistors in parallel and their impact on fast switching operations

Abstract

In this paper, the impact of paralleling nonidentical Gallium Nitride High Electron Mobility transistors (GaN HEMTs) in a high-speed switch is investigated. GaN HEMTs with a packaged p-gate and a die of MIS-gate types are being evaluated theoretically. The p-type simulation results are verified with experimental prototype of a fast switching cell.

No file

Dates and versions

hal-03184726 , version 1 (29-03-2021)

Identifiers

Cite

Thilini Wickramasinghc, Bruno Allard, Rene Escofficr, Marc Plissonnicr. Electrical property variability of GaN transistors in parallel and their impact on fast switching operations. EPE'20 ECCE Europe, Sep 2020, Lyon, France. pp.P.1-P.9, ⟨10.23919/EPE20ECCEEurope43536.2020.9215684⟩. ⟨hal-03184726⟩
92 View
0 Download

Altmetric

Share

  • More