High Aspect Ratio Heterogenous Sn-Ag Bump Structure using a Sequential Electroplating Process and Novel Barrier - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2020
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hal-03178718 , version 1 (24-03-2021)

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Mohamed El Amrani, Etienne Paradis, David Danovitch, Dominique Drouin. High Aspect Ratio Heterogenous Sn-Ag Bump Structure using a Sequential Electroplating Process and Novel Barrier. IEEE Electronic Components and Technology Conf, Jun 2020, Lake Buena Vista, United States. ⟨hal-03178718⟩
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