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Article Dans Une Revue Solid-State Electronics Année : 2020

Experimental and simulation investigation of the out-of-equilibrium phenomena on the pseudo-MOSFET configuration under transient linear voltage ramps

Résumé

The pseudo-MOSFET configuration is an electrical characterization technique developed for silicon-on-insulator (SOI) wafers. The wide variety of experiments that have been performed to date have also extended recently in the study of out-of-equilibrium phenomena for bio-sensing applications. However, the lack of a full understanding of the ohmic contact behaviour between the probes and the low doped silicon film results in simulation inconsistencies. This work proposes a simulated device structure that is capable of reproducing the behaviour of the device and further extends the experiments into large-signal linear ramps which are also reproduced through simulations.
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hal-03171017 , version 1 (20-05-2022)

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Paternité - Pas d'utilisation commerciale

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Miltiadis Alepidis, Licinius Benea, Davide Bucci, Xavier Mescot, Maryline Bawedin, et al.. Experimental and simulation investigation of the out-of-equilibrium phenomena on the pseudo-MOSFET configuration under transient linear voltage ramps. Solid-State Electronics, 2020, 168, pp.107721. ⟨10.1016/j.sse.2019.107721⟩. ⟨hal-03171017⟩
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