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Article Dans Une Revue Inorganic Chemistry Année : 2020

Layered Quaternary Compounds in the Cu 2 S–In 2 S 3 –Ga 2 S 3 system

Eric Gau- Tron
  • Fonction : Auteur
Maria Teresa Caldes
  • Fonction : Auteur
Catherine Guillot-Deudon
  • Fonction : Auteur
Angelica Thomere
  • Fonction : Auteur
Margaux Penicaud
  • Fonction : Auteur
Eric Gautron
  • Fonction : Auteur
Philippe Boullay
Martine Bujoli-Doeuff
  • Fonction : Auteur
Nicolas Barreau
  • Fonction : Auteur
Stéphane Jobic
Alain Lafond

Résumé

Several new materials, Cu0.32In1.74Ga0.84S4 (CIGS4), Cu0.65In1.75Ga1.4S5 (CIGS5), Cu1.44In2.77Ga0.76S6 (CIGS6) and Cu1.1In2.49Ga1.8S7 (CIGS7) have been evidenced in the Cu2S-In2S3-Ga2S3 pseudo ternary system. All of them present a 2D structure built upon infinite 2/∞[InS2] layers ((InS6) octahedra sharing edges) on which condense on both side mono-, bi-, or tri-2/∞[MS] layers ((MS4) tetrahedra (M = Cu, In, Ga) sharing corners). (M(Td))n-2(In(Oh))Sn slabs are separated from each other by a van der Waals gap and subscript n refers to the number of sulfur layers within the building block. These compounds have the propensity to display stacking faults but also polymorphic forms. Their optical gap (ca. 1.7 eV) is quite similar to the one of the Cu(In0.7Ga0.3)S2 chalcopyrite absorbers used in tandem solar cells, and the major charge carriers are holes. This suggests that they might be very attractive for photovoltaic applications in thin film devices but also for photocatalysis.
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Dates et versions

hal-03039054 , version 1 (03-12-2020)

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Maria Teresa Caldes, Eric Gau- Tron, Maria Teresa Caldes, Catherine Guillot-Deudon, Angelica Thomere, et al.. Layered Quaternary Compounds in the Cu 2 S–In 2 S 3 –Ga 2 S 3 system. Inorganic Chemistry, 2020, 59 (7), pp.4546-4553. ⟨10.1021/acs.inorgchem.9b03686⟩. ⟨hal-03039054⟩
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