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Article Dans Une Revue ACS Applied Nano Materials Année : 2020

InGaN Quantum Dots Studied by Correlative Microscopy Techniques for Enhanced Light-Emitting Diodes

Étude des boites quantiques InGaN par microscopie corrélative pour diodes électroluminescentes améliorées

Jonathan Houard
Eva Monroy
Lorenzo Rigutti

Résumé

InGaN/GaN nanostructures form the active region of III-nitride emitters (light emitting diodes, laser diodes, single photon emitters) in the visible spectral range. In order to understand the optical performance of these nanostructures it is necessary to obtain a direct correlation of alloy distribution and optical features. With this purpose in mind, laser-assisted atom probe tomography (La-APT) is a unique tool to visualize the three-dimensional distribution of chemical species at the nanometer scale. Recent advances in this technique also offer the possibility of recording simultaneously the photoluminescence spectrum of the
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Dates et versions

hal-02969122 , version 1 (16-10-2020)

Identifiants

Citer

Ioanna Dimkou, Enrico Di Russo, Pradip Dalapati, Jonathan Houard, Nevine Rochat, et al.. InGaN Quantum Dots Studied by Correlative Microscopy Techniques for Enhanced Light-Emitting Diodes. ACS Applied Nano Materials, 2020, 3 (10), pp.10133-10143. ⟨10.1021/acsanm.0c02106⟩. ⟨hal-02969122⟩
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