InGaN Quantum Dots Studied by Correlative Microscopy Techniques for Enhanced Light-Emitting Diodes
Étude des boites quantiques InGaN par microscopie corrélative pour diodes électroluminescentes améliorées
Résumé
InGaN/GaN nanostructures form the active region of III-nitride emitters (light emitting diodes, laser diodes, single photon emitters) in the visible spectral range. In order to understand the optical performance of these nanostructures it is necessary to obtain a direct correlation of alloy distribution and optical features. With this purpose in mind, laser-assisted atom probe tomography (La-APT) is a unique tool to visualize the three-dimensional distribution of chemical species at the nanometer scale. Recent advances in this technique also offer the possibility of recording simultaneously the photoluminescence spectrum of the
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