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Communication Dans Un Congrès Année : 2003

Towards the Fabrication and Measurement of High Sensitivity SiC-UV Detectors with Oxide Ramp Termination

Résumé

The paper is focused on the fabrication and measurement of the high UV detection performances 6H-SiC pn photodiodes with an efficient planar termination. The oxide ramp technology used for these photodetectors is extensively presented.. Two oxide layers with a total thickness of 1µm, were grown onto the epilayer. In order to obtain an oxide ramp profile, a suitable etching process was used. Experimental measurements indicate that a ramp angle of less than 4° was achieved. The p + layer was obtained by Al implantation. Ni and Pt were deposited on the back side and on the p layer, respectively. The OBIC technique was used for optical measurements of the samples. The diode's surface was scanned left to right and up to down by a 4 µm laser spot modulated at 70 Hz by a chopper. A computer controls the movement of the test device, and registers the current measurement as a function of the position of the UV spot. The impact of diode's bias as well as their photoresponse on some incident light power values has been revealed by extensive measurements and numerical simulations. The measurement show a stronger diode's bias effect on its optical properties than the simulation data. We propose this paper for poster presentation at C2 Optical devices and systems
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Dates et versions

hal-02937545 , version 1 (14-09-2020)

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  • HAL Id : hal-02937545 , version 1

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G Brezeanu, Philippe Godignon, E Dimitrova, C Raynaud, Dominique Planson, et al.. Towards the Fabrication and Measurement of High Sensitivity SiC-UV Detectors with Oxide Ramp Termination. International Conference on Silicon Carbide and Related Materials (ICSCRM 2003), Oct 2003, Lyon, France. ⟨hal-02937545⟩
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