‘In situ Raman characterization post growth of CeO2 thin films sputtered on (111) Si in order to optimize the annealing parameters’

Y. Guhel; J. Bernard; B. Boudart

Journal Articles Microelectronic Engineering Year : 2014

‘In situ Raman characterization post growth of CeO2 thin films sputtered on (111) Si in order to optimize the annealing parameters’

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Y. Guhel

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Laboratoire Universitaire des Sciences Appliquées de Cherbourg

J. Bernard

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B. Boudart

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Engineering Sciences [physics]

Yannick Guhel : Connect in order to contact the contributor

https://hal.science/hal-02936076

Submitted on : Friday, September 11, 2020-12:39:29 AM

Last modification on : Wednesday, March 9, 2022-2:14:03 PM

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hal-02936076 , version 1 (11-09-2020)

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HAL Id : hal-02936076 , version 1

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Y. Guhel, J. Bernard, B. Boudart. ‘In situ Raman characterization post growth of CeO2 thin films sputtered on (111) Si in order to optimize the annealing parameters’. Microelectronic Engineering, 2014. ⟨hal-02936076⟩

‘In situ Raman characterization post growth of CeO2 thin films sputtered on (111) Si in order to optimize the annealing parameters’

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