‘In situ Raman characterization post growth of CeO2 thin films sputtered on (111) Si in order to optimize the annealing parameters’ - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Microelectronic Engineering Année : 2014

‘In situ Raman characterization post growth of CeO2 thin films sputtered on (111) Si in order to optimize the annealing parameters’

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hal-02936076 , version 1 (11-09-2020)

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  • HAL Id : hal-02936076 , version 1

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Y. Guhel, J. Bernard, B. Boudart. ‘In situ Raman characterization post growth of CeO2 thin films sputtered on (111) Si in order to optimize the annealing parameters’. Microelectronic Engineering, 2014. ⟨hal-02936076⟩
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