‘Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using the Raman spectroscopy’ - Archive ouverte HAL Access content directly
Journal Articles Microelectronics Reliability Year : 2011

‘Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using the Raman spectroscopy’

F. Berthet
  • Function : Author
B. Boudart
  • Function : Author
J.L. Trolet
  • Function : Author
M. Piccione
  • Function : Author
Christophe Gaquière
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Dates and versions

hal-02936069 , version 1 (11-09-2020)

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  • HAL Id : hal-02936069 , version 1

Cite

F. Berthet, Y. Guhel, B. Boudart, J.L. Trolet, M. Piccione, et al.. ‘Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using the Raman spectroscopy’. Microelectronics Reliability, 2011. ⟨hal-02936069⟩
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