Strain-induced electro-optical effect in silicon Mach-Zehnder modulators
Abstract
Due to the strong evolution of data transmission worldwide, silicon photonics needs to provide low power consuming and ultra-fast modulators. Pockels effect is known to answer both these demands. However, silicon is a centrosymmetric crystal, which makes it inadequate to use Pockels effect. Nonetheless, by straining a silicon waveguide, it is possible to unlock second order nonlinear optics effects, enabling electro-optic modulation through Pockels effect. In our work, we experimentally demonstrated a high-speed strain-induced Pockels effect based electro-optic modulation in a Mach-Zehnder silicon modulator. We also present a complete analysis of Pockels, Kerr, and free carriers effects.
Domains
Optics / Photonic
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3p-Christian-Lafforgue-Strain-induced-electro-optical-effect-in-silicon-Mach-Zehnder-modulators-ECIO-2020.pdf (759.88 Ko)
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