UV Laser can be used to generate electron-hole pairs into Wide Band-Gap (WBG) semiconductors. In the space charge region, the electric field drives the collected carriers and a current, so-called Optical Beam induced Current (OBIC), can be measured. The induced current is directly related to the electrical field in the device. The OBIC, is a non-destructive characterization technique, which has been previously successfully used to characterize High Voltage (HV) SiC devices [1,2,3,4]. In order to fully benefit of the advantages provided by SiC and to avoid premature breakdown of the high voltage devices, it is mandatory to have efficient peripheral protections such as MESA and/or JTE. The OBIC characterization can help the technology computer-aided design (TCAD) and the device process to optimize the efficiency of the periphery protection by analyzing the electric field distribution in the structure and especially at the junction periphery. In this talk, we will present an in-house testbench called micro-OBIC which will allow us to characterize SiC high voltage (HV) PiN diodes (10 kV class) with a micro-meter spatial resolution.