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Article Dans Une Revue IEEE Transactions on Electron Devices Année : 2020

Highly tunable high-Q inversion-mode MOS varactor in the 1-325-GHz band

L. Vincent
  • Fonction : Auteur
  • PersonId : 862007
Manuel J. Barragan

Résumé

This article presents the design, experimental results, and modeling of an inversion-mode CMOS varactor integrated in the STMicroelectronics 55-nm BiCMOS technology. The device was characterized from 1 to 325 GHz, demonstrating high-quality factor at millimeter-waves. For instance, a quality factor of 7 at around 190 GHz for a tuning ratio (C max /C min ) greater than 4 was measured. This performance overpasses that of accumulation-mode varactors usually provided in CMOS technologies design kits, for frequencies beyond about 100 GHz. In addition, a smallsignal electrical model is provided from 100 to 250 GHz.
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Dates et versions

hal-02899947 , version 1 (17-07-2020)

Licence

Paternité - Pas d'utilisation commerciale

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Citer

Marc Margalef-Rovira, Abdelhalim Saadi, L. Vincent, Sylvie Lepilliet, Christophe Gaquière, et al.. Highly tunable high-Q inversion-mode MOS varactor in the 1-325-GHz band. IEEE Transactions on Electron Devices, 2020, 67 (6), pp.2263-2269. ⟨10.1109/TED.2020.2989726⟩. ⟨hal-02899947⟩
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