Phonon transport in silicon, influence of the dispersion properties choice on the description of the anharmonic resistive mechanisms - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue The European Physical Journal B: Condensed Matter and Complex Systems Année : 2009

Phonon transport in silicon, influence of the dispersion properties choice on the description of the anharmonic resistive mechanisms

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hal-02461584 , version 1 (30-01-2020)

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David Lacroix, I. Traore, S. Fumeron, G. Jeandel. Phonon transport in silicon, influence of the dispersion properties choice on the description of the anharmonic resistive mechanisms. The European Physical Journal B: Condensed Matter and Complex Systems, 2009, 67 (1), pp.15-25. ⟨10.1140/epjb/e2008-00464-6⟩. ⟨hal-02461584⟩
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