Si/SiGe superlattice I/O finFETs in a vertically-stacked Gate-All-Around horizontal Nanowire Technology - Archive ouverte HAL Access content directly
Conference Papers Year : 2018

Si/SiGe superlattice I/O finFETs in a vertically-stacked Gate-All-Around horizontal Nanowire Technology

G. Hellings
  • Function : Author
H. Mertens
  • Function : Author
A. Subirats
  • Function : Author
E. Simoen
  • Function : Author
T. Schram
  • Function : Author
L.-A. Ragnarsson
  • Function : Author
M. Simicic
  • Function : Author
S.-H. Chen
  • Function : Author
B. Parvais
  • Function : Author
B Cretu
J. Machillot
  • Function : Author
V. Peña
  • Function : Author
  • PersonId : 958537
A. Mocuta
  • Function : Author
  • PersonId : 1050861
D. Linten
  • Function : Author
N. Horiguchi
  • Function : Author
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hal-02438750 , version 1 (14-01-2020)

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G. Hellings, H. Mertens, A. Subirats, E. Simoen, T. Schram, et al.. Si/SiGe superlattice I/O finFETs in a vertically-stacked Gate-All-Around horizontal Nanowire Technology. 2018 IEEE Symposium on VLSI Technology, Jun 2018, Honolulu, United States. pp.85-86, ⟨10.1109/VLSIT.2018.8510654⟩. ⟨hal-02438750⟩
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