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Article Dans Une Revue physica status solidi (a) Année : 2020

Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures

Résumé

Herein, the development of gallium nitride on silicon (GaN-on-Si) heterostructures targeting 1200 V power applications is reported. In particular, it is shown that the insertion of superlattices (SLs) into the buffer layers allows pushing the vertical breakdown voltage above 1200 V without generating additional trapping effects as compared with a more standard optimized step-graded AlGaN-based epistructure using a similar total buffer thickness. DC characterizations of fabricated transistors by means of back-gating measurements reflect both the enhancement of the breakdown voltage and the low trapping effects up to 1200 V. These results show that a proper buffer optimization and the insertion of SL pave the way to GaN-on-Si lateral power transistors operating at 1200 V with low on-resistance and low trapping effects.
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hal-02363323 , version 1 (08-12-2020)

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Riad Kabouche, Idriss Abid, Roland Püsche, Joff Derluyn, Stefan Degroote, et al.. Low on-resistance and low trapping effects in 1200 V superlattice GaN-on-silicon heterostructures. physica status solidi (a), 2020, Special Issue: Nitride Semiconductors, 217 (7), pp.1900687. ⟨10.1002/pssa.201900687⟩. ⟨hal-02363323⟩
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