Journal Articles
physica status solidi (a)
Year : 2018
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https://hal.science/hal-02322556
Submitted on : Monday, October 21, 2019-4:03:01 PM
Last modification on : Friday, March 1, 2024-6:20:03 PM
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Hady Yacoub, Thorsten Zweipfennig, Holger Kalisch, Andrei Vescan, Armin Dadgar, et al.. Impact of AlN/Si Nucleation Layers Grown Either by NH 3 -MBE or MOCVD on the Properties of AlGaN/GaN HFETs. physica status solidi (a), 2018, 215 (9), pp.1700638. ⟨10.1002/pssa.201700638⟩. ⟨hal-02322556⟩
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