Impact of AlN/Si Nucleation Layers Grown Either by NH 3 -MBE or MOCVD on the Properties of AlGaN/GaN HFETs - Archive ouverte HAL Access content directly
Journal Articles physica status solidi (a) Year : 2018

Impact of AlN/Si Nucleation Layers Grown Either by NH 3 -MBE or MOCVD on the Properties of AlGaN/GaN HFETs

Hady Yacoub
  • Function : Author
Thorsten Zweipfennig
  • Function : Author
Holger Kalisch
  • Function : Author
Andrei Vescan
  • Function : Author
Armin Dadgar
  • Function : Author
Matthias Wieneke
  • Function : Author
Jürgen Bläsing
  • Function : Author
A. Strittmatter
  • Function : Author
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hal-02322556 , version 1 (21-10-2019)

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Hady Yacoub, Thorsten Zweipfennig, Holger Kalisch, Andrei Vescan, Armin Dadgar, et al.. Impact of AlN/Si Nucleation Layers Grown Either by NH 3 -MBE or MOCVD on the Properties of AlGaN/GaN HFETs. physica status solidi (a), 2018, 215 (9), pp.1700638. ⟨10.1002/pssa.201700638⟩. ⟨hal-02322556⟩
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