Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH 3 -MBE - Archive ouverte HAL Access content directly
Journal Articles physica status solidi (a) Year : 2018

Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH 3 -MBE

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hal-02322484 , version 1 (21-10-2019)

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Stéphanie Rennesson, Mathieu Leroux, Mohamed Al Khalfioui, Maud Nemoz, Sebastien Chenot, et al.. Ultrathin AlN-Based HEMTs Grown on Silicon Substrate by NH 3 -MBE. physica status solidi (a), 2018, 215 (9), pp.1700640. ⟨10.1002/pssa.201700640⟩. ⟨hal-02322484⟩
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