High-Power 810-nm Passively Mode-Locked Laser Diode With Al-Free Active Region - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue IEEE Photonics Journal Année : 2019

High-Power 810-nm Passively Mode-Locked Laser Diode With Al-Free Active Region

Résumé

We report on a mode locked semiconductor laser for high-power pulse generation in the 810-nm waveband. This is based on a novel GaAsP/GaInP single quantum-well structure, with Aluminum-free active region. Average output powers higher than 40 mW are reported in narrow ridge two-section devices. A 1.65-mm-long laser with 70 μm saturable absorber yields a stable mode locked regime at a 23-GHz repetition rate as evidenced by a record low RF linewidth of 75 kHz over a wide range of gain currents. Other laser dynamics are also reported at lower frequencies.
Fichier principal
Vignette du fichier
High-Power_810-nm_Passively_Mode-Locked_Laser_Diode_With_Al-Free_Active_Region.pdf (1.97 Mo) Télécharger le fichier
Origine : Publication financée par une institution

Dates et versions

hal-02322269 , version 1 (14-02-2024)

Identifiants

Citer

Quentin Gaimard, Guy Aubin, Kamel Merghem, Michel Krakowski, Olivier Parillaud, et al.. High-Power 810-nm Passively Mode-Locked Laser Diode With Al-Free Active Region. IEEE Photonics Journal, 2019, 11 (1), pp.1500405. ⟨10.1109/JPHOT.2018.2886460⟩. ⟨hal-02322269⟩
44 Consultations
4 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More