High-Power 810-nm Passively Mode-Locked Laser Diode With Al-Free Active Region
Résumé
We report on a mode locked semiconductor laser for high-power pulse generation in the 810-nm waveband. This is based on a novel GaAsP/GaInP single quantum-well structure, with Aluminum-free active region. Average output powers higher than 40 mW are reported in narrow ridge two-section devices. A 1.65-mm-long laser with 70 μm saturable absorber yields a stable mode locked regime at a 23-GHz repetition rate as evidenced by a record low RF linewidth of 75 kHz over a wide range of gain currents. Other laser dynamics are also reported at lower frequencies.
Domaines
Optique / photonique
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High-Power_810-nm_Passively_Mode-Locked_Laser_Diode_With_Al-Free_Active_Region.pdf (1.97 Mo)
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| Origine | Publication financée par une institution |
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