Effect of the plasma etching on InAsP/InP quantum well structures measured through low temperature micro-photoluminescence intensity scanning - Archive ouverte HAL Accéder directement au contenu
Poster De Conférence Année : 2019
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hal-02291445 , version 1 (18-09-2019)

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Nebile Isik Goktas, Jean-Pierre Landesman, Ray Lapierre, Shahram Ghanad-Tavakoli, Erwine Pargon, et al.. Effect of the plasma etching on InAsP/InP quantum well structures measured through low temperature micro-photoluminescence intensity scanning. 19th Canadian Semiconductor Science and Technology Conference (CSSTC 2019), Jul 2019, Saskatoon, Canada. ⟨hal-02291445⟩
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