Effect of the plasma etching on InAsP/InP quantum well structures measured through low temperature micro-photoluminescence intensity scanning - Archive ouverte HAL
Poster De Conférence Année : 2019

Effect of the plasma etching on InAsP/InP quantum well structures measured through low temperature micro-photoluminescence intensity scanning

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Science des matériaux [cond-mat.mtrl-sci] Optique [physics.optics]

Christophe Levallois  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-02291445

Soumis le : mercredi 18 septembre 2019-17:54:04

Dernière modification le : lundi 16 décembre 2024-15:37:02

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Dates et versions

hal-02291445 , version 1 (18-09-2019)

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  • HAL Id : hal-02291445 , version 1

Citer

Nebile Isik Goktas, Jean-Pierre Landesman, Ray Lapierre, Shahram Ghanad-Tavakoli, Erwine Pargon, et al.. Effect of the plasma etching on InAsP/InP quantum well structures measured through low temperature micro-photoluminescence intensity scanning. 19th Canadian Semiconductor Science and Technology Conference (CSSTC 2019), Jul 2019, Saskatoon, Canada. ⟨hal-02291445⟩

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CEA UNIV-RENNES1 UGA CNRS INSA-RENNES FOTON FOTON-INSA OSUR LTM PLASMA_ETCHING IPR FOTON_OHM IPR-MN UR1-UFR-SPM UR1-MATH-STIC CEA-DRF UNIV-RENNES INSA-GROUPE UR1-MATH-NUM UR1-MMS
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