Investigation of processing-induced defects in GaAs based vertical cavity surface emitting lasers with Al oxide confinement layers - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2019

Investigation of processing-induced defects in GaAs based vertical cavity surface emitting lasers with Al oxide confinement layers

Fichier non déposé

Dates et versions

hal-02291435 , version 1 (18-09-2019)

Identifiants

  • HAL Id : hal-02291435 , version 1

Citer

Merwan Mokhtari, Philippe Pagnod-Rossiaux, François Laruelle, Jean-Pierre Landesman, Alain Moréac, et al.. Investigation of processing-induced defects in GaAs based vertical cavity surface emitting lasers with Al oxide confinement layers. 18th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVIII), Sep 2019, Berlin, Germany. ⟨hal-02291435⟩
67 Consultations
0 Téléchargements

Partager

Gmail Mastodon Facebook X LinkedIn More