Investigation of processing-induced defects in GaAs based vertical cavity surface emitting lasers with Al oxide confinement layers - Archive ouverte HAL
Communication Dans Un Congrès Année : 2019

Investigation of processing-induced defects in GaAs based vertical cavity surface emitting lasers with Al oxide confinement layers

Domaines

Science des matériaux [cond-mat.mtrl-sci] Optique [physics.optics] Optique / photonique

Christophe Levallois  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-02291435

Soumis le : mercredi 18 septembre 2019-17:29:50

Dernière modification le : mardi 17 septembre 2024-10:16:17

Fichier non déposé

Dates et versions

hal-02291435 , version 1 (18-09-2019)

Identifiants

  • HAL Id : hal-02291435 , version 1

Citer

Merwan Mokhtari, Philippe Pagnod-Rossiaux, François Laruelle, Jean-Pierre Landesman, Alain Moréac, et al.. Investigation of processing-induced defects in GaAs based vertical cavity surface emitting lasers with Al oxide confinement layers. 18th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVIII), Sep 2019, Berlin, Germany. ⟨hal-02291435⟩

Exporter

BibTeX XML-TEI Dublin Core DC Terms EndNote DataCite

Collections

UNIV-RENNES1 CNRS INSA-RENNES FOTON FOTON-INSA OSUR IPR FOTON_OHM IPR-MN UR1-UFR-SPM UR1-MATH-STIC UNIV-RENNES INSA-GROUPE UR1-MATH-NUM UR1-MMS
77 Consultations
0 Téléchargements

Partager

More