Investigation of processing-induced defects in GaAs based vertical cavity surface emitting lasers with Al oxide confinement layers - Archive ouverte HAL
Communication Dans Un Congrès Année : 2019

Investigation of processing-induced defects in GaAs based vertical cavity surface emitting lasers with Al oxide confinement layers

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Science des matériaux [cond-mat.mtrl-sci] Optique [physics.optics] Optique / photonique

Christophe Levallois  : Connectez-vous pour contacter le contributeur

https://hal.science/hal-02291435

Soumis le : mercredi 18 septembre 2019-17:29:50

Dernière modification le : mardi 17 septembre 2024-10:16:17

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hal-02291435 , version 1 (18-09-2019)

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  • HAL Id : hal-02291435 , version 1

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Merwan Mokhtari, Philippe Pagnod-Rossiaux, François Laruelle, Jean-Pierre Landesman, Alain Moréac, et al.. Investigation of processing-induced defects in GaAs based vertical cavity surface emitting lasers with Al oxide confinement layers. 18th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors (DRIP XVIII), Sep 2019, Berlin, Germany. ⟨hal-02291435⟩

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