Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Solid-State Electronics Année : 2011

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hal-02266382 , version 1 (28-11-2020)

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Ch. Muller, D. Deleruyelle, R. Müller, M. Thomas, A. Demolliens, et al.. Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer. Solid-State Electronics, 2011, 56 (1), pp.168-174. ⟨10.1016/j.sse.2010.10.006⟩. ⟨hal-02266382⟩
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