Article Dans Une Revue Solid-State Electronics Année : 2011

Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer

Dates et versions

hal-02266382 , version 1 (28-11-2020)

Identifiants

Citer

Ch. Muller, D. Deleruyelle, R. Müller, M. Thomas, A. Demolliens, et al.. Resistance change in memory structures integrating CuTCNQ nanowires grown on dedicated HfO2 switching layer. Solid-State Electronics, 2011, 56 (1), pp.168-174. ⟨10.1016/j.sse.2010.10.006⟩. ⟨hal-02266382⟩
116 Consultations
0 Téléchargements

Altmetric

Partager

  • More