Vacancy-type defects in GaN self-assembled nanowires probed using monoenergetic positron beam - Archive ouverte HAL
Article Dans Une Revue Journal of Applied Physics Année : 2019

Vacancy-type defects in GaN self-assembled nanowires probed using monoenergetic positron beam

Résumé

Vacancy-type defects in GaN nanowires (NWs) and the trapping of electrons by the vacancies were studied by positron annihilation. Undoped, Si-, and Mg-doped GaN NWs were grown on Si substrates by plasma-assisted molecular beam epitaxy. The major species of vacancies in the undoped and Si-doped samples was identified as a complex between a Ga vacancy and impurities such as oxygen and hydrogen. For the Mg-doped samples, the trapping rate of positrons for such defects decreased with the increase in Mg concentration because of the downward shift of Fermi level position and a resultant shift of the vacancy charge states from neutral (negative) to positive. Under the illumination of a 325-nm He-Cd laser, positrons were found to be trapped by vacancy-type defects, which was attributed to the trapping of excited electrons by these defects.
Fichier principal
Vignette du fichier
175705_1_online.pdf (1.58 Mo) Télécharger le fichier
Origine Fichiers éditeurs autorisés sur une archive ouverte

Dates et versions

hal-02164173 , version 1 (11-08-2023)

Identifiants

Citer

Akira Uedono, Alexandra-Madalina Siladie, Julien Pernot, Bruno Daudin, Shoji Ishibashi. Vacancy-type defects in GaN self-assembled nanowires probed using monoenergetic positron beam. Journal of Applied Physics, 2019, 125 (17), pp.175705. ⟨10.1063/1.5088653⟩. ⟨hal-02164173⟩
116 Consultations
30 Téléchargements

Altmetric

Partager

More