Gallium-containing sulfide binary and ternary materials by atomic layer deposition: precursor reactivities and growth fine chemistries - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Materials Today Chemistry Année : 2018

Gallium-containing sulfide binary and ternary materials by atomic layer deposition: precursor reactivities and growth fine chemistries

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Chimie
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hal-02148685 , version 1 (05-06-2019)

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Nathanaelle Schneider, Mathieu Frégnaux, Muriel Bouttemy, Frédérique Donsanti, Arnaud Etcheberry, et al.. Gallium-containing sulfide binary and ternary materials by atomic layer deposition: precursor reactivities and growth fine chemistries. Materials Today Chemistry, 2018, 10, pp.142-152. ⟨10.1016/j.mtchem.2018.08.006⟩. ⟨hal-02148685⟩
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