Experimental and theoretical investigation of the ‘apparent’ mobility degradation in Bulk and UTBB-FDSOI devices: A focus on the near-spacer-region resistance - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2014

Experimental and theoretical investigation of the ‘apparent’ mobility degradation in Bulk and UTBB-FDSOI devices: A focus on the near-spacer-region resistance

Fichier non déposé

Dates et versions

hal-02138853 , version 1 (24-05-2019)

Identifiants

  • HAL Id : hal-02138853 , version 1

Citer

D. Rideau, F. Monsieur, O. Nier, Y. M. Niquet, J. Lacord, et al.. Experimental and theoretical investigation of the ‘apparent’ mobility degradation in Bulk and UTBB-FDSOI devices: A focus on the near-spacer-region resistance. 2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2014, Yokohama, France. pp.101-104. ⟨hal-02138853⟩
47 Consultations
0 Téléchargements

Partager

Gmail Facebook X LinkedIn More